insulated gate bipolar transistor中文是什么意思

• 晶管
• 绝缘的双级晶体管

• "insulate"中文翻译    vt. 1.隔离，使孤立。 2.【物理学】使绝缘；使绝热 ...
• "gate"中文翻译     gate2 n. 1.〔古语〕街道，路〔一般 ...
• "bipolar"中文翻译    adj. 1.【电学】两极的，双极的。 2.有两种相反性 ...
• "transistor"中文翻译    n. 【无线电】晶体(三极)管；晶体管[半导体]收音机。 ...
• "insulated-gate bipolar transistor" 中文翻译 :    绝缘闸异极晶状管; 绝缘栅双极晶体管
• "igbt-insulated gate bipolar transistor" 中文翻译 :    要 本文提出一种简便的模仿绝缘栅双极性; 要 本文提出一种简便的模拟绝缘栅双极性
• "insulated-gate bipolar transistor (igbt)" 中文翻译 :    绝缘门双极晶体管
• "mos insulated gate transistor" 中文翻译 :    绝缘栅金属氧化物半导体晶体管
• "dual gate insulated gate transistor" 中文翻译 :    双栅极绝缘场效应管
• "bipolar insulated gate fet ic" 中文翻译 :    双极 绝缘栅场效应晶体管集成电路
• "insulated gate field effect transistor" 中文翻译 :    绝缘栅场效应晶体管
• "insulated gate field-effect transistor" 中文翻译 :    绝缘栅场效应晶体管,隔离栅场效应晶体管
• "thin-film insulated gate transistor" 中文翻译 :    薄膜绝缘栅晶体管
• "bigfet bipolar insulated gate fet ic" 中文翻译 :    绝缘栅场效应晶体管集成电路
• "bipolar transistor" 中文翻译 :    双极电晶体; 双极晶体管; 双极型晶体管; 双极性晶体管; 双级性晶体管; 双载电晶体，双极性电晶体
• "transistor bipolar" 中文翻译 :    非结晶型半导体物质; 双极性电晶体
• "bipolar gate" 中文翻译 :    双极门; 双极性栅
• "insulated gate" 中文翻译 :    绝缘栅
• "gate transistor" 中文翻译 :    选通晶体管
• "transistor gate" 中文翻译 :    晶体管门电路
• "transistor not gate" 中文翻译 :    三极管非门
• "transistor-transistor logic gate" 中文翻译 :    晶体管-晶体管逻辑门
• "alloy bipolar transistor" 中文翻译 :    合金双极晶体管; 合金型双极晶体管
• "bidirectional bipolar transistor" 中文翻译 :    双向双极晶体管; 双向双极型晶体管
• "bipolar junction transistor" 中文翻译 :    三极管; 双极面结型晶体管; 双极型结型晶体管; 双极型晶体管; 双极性晶体管

• Insulated gate bipolar transistor modules arm and pair of arms
  绝缘栅双极型晶体管模块.臂和臂对
• High power solid modulator with insulated gate bipolar transistor
  绝缘栅控双极晶体管大功率固态调制器
• Insulated gate bipolar transistor
  绝缘的双级晶体管
• This paper investigates the insulate gate bipolar transistor ( igbt ) used as the main switch in pulsed power supply . firstly , the igbt " s characteristics , principle and applications are introduced
  本文在分析了中大功率igbt特性、工作原理及应用背景的基础上，将其作为材料表面防护处理的特种脉冲电源主功率开关器件。
• This paper has designed a inverter power supply of volume 2kva , working frequency 20khz . , based on that has analyzed the characteristic of igbt ( insulated gate bipolar transistor ) . it was provided the working theory of dc voltage circuit and bridge type invert circuit
  本文在分析了igbt (绝缘栅双极晶体管)特性的基础上，设计了一台容量为2kva 、频率为20khz的高频逆变电源。
• In this paper , a phase shifting pulse width modulated ( pwm ) soft switching high voltage invert power supply has been developed with the use of the principle of advanced invert technique and the new type of power semi - conductor device - insulated gate bipolar transistor ( igbt )
  本文采用最新的逆变思想与新型的开关器件?绝缘栅型双极晶体管( igbt ) ，研制出了移相式pwm软开关高压逆变电源。逆变技术发展至今，已经逐渐向大功率方向发展。
• According to the following design theory : the dsp calculates in real time and produces three phases spwm waves to control the on or off of the 6 igbts in ipm respectively . ipm then inverts the commutated single phase direct current ( insulated gate bipolar transistor ) into three phases alternating current . when modulated signals of spwm are changed , the on - off time of switches also changes , so as to the voltage and frequency of output signals
  本文提出了一种基于dsp (数字信号处理器tms320f240 )的通用的三相间接变频电源系统，利用分段同步调制法和混合查表法，实时计算不同频率下的采样周期、电压幅值、输出脉宽，产生双极性spwm波形，经驱动放大后用于ipm ( intelligentpowermodule )中的绝缘栅双极型晶体管栅级驱动，以控制电源的输出电压和频率，实现变频电源的智能数字控制。
• High frequency switching technique is becoming more popular in the power electronics area , the high frequency power transistors are applied in the buck - boost type chopper system . the characteristics of power mosfet and insulated gate bipolar transistors ( igbt ) , some new kinds of power swithing devices , are deeply studied
  高频开关技术是当今电力电子技术发展的方向，本文研究的buck - boost斩波系统中采用了高频功率器件，所以本文对新型开关器件? ?功率mos场效应管[ mosfet ]和绝缘门极晶体管[ igbt ]的特性进行了初步研究。
• Abstract : this paper puts forward a designing method , on the basis of experimental results , for a high - efficient powerful switching power supply employing igbt ( insulated gate bipolar transistors ) . the paper analyzes the main factors affecting the efficiency of the main loop and the measures to increase efficiency which can reach 90 % according to the experiment
  文摘:在实验研究的基础上，提出一种采用igbt器件的高效大功率开关电源的设计方法，着重分析了系统主回路中影响效率的各主要因素以及应采取的对策，实验证明可使效率达90 %以上。
• This paper puts forward a designing method , on the basis of experimental results , for a high - efficient powerful switching power supply employing igbt ( insulated gate bipolar transistors ) . the paper analyzes the main factors affecting the efficiency of the main loop and the measures to increase efficiency which can reach 90 % according to the experiment
  在实验研究的基础上，提出一种采用igbt器件的高效大功率开关电源的设计方法，着重分析了系统主回路中影响效率的各主要因素以及应采取的对策，实验证明可使效率达90 %以上。